Quantum-statistical transport phenomena in memristive computing architectures

TL;DR

This paper explores how quantum electron transport and localization phenomena fundamentally influence variability and performance in nanoscale memristive devices, impacting their reliability and potential for future computing architectures.

Contribution

It introduces a quantum-statistical framework modeling memristive device variability through Anderson localization, linking quantum effects to circuit performance.

Findings

Quantum conductance fluctuations set a lower bound on device variability.

Electron coherence influences the reliability of memristive devices.

Localization phenomena are directly linked to circuit-level performance.

Abstract

The advent of reliable, nanoscale memristive components is promising for next generation compute-in-memory paradigms, however, the intrinsic variability in these devices has prevented widespread adoption. Here we show coherent electron wave functions play a pivotal role in the nanoscale transport properties of these emerging, non-volatile memories. By characterizing both filamentary and non-filamentary memristive devices as disordered Anderson systems, the switching characteristics and intrinsic variability arise directly from the universality of electron transport in disordered media. Our framework suggests localization phenomena in nanoscale, solid-state memristive systems are directly linked to circuit level performance. We discuss how quantum conductance fluctuations in the active layer set a lower bound on device variability. This finding implies there is a fundamental quantum limit on the reliability of memristive devices, and electron coherence will play a decisive role in surpassing or maintaining Moore's Law with these systems.