# Tunable Giant Rashba-type Spin Splitting in PtSe$_2$/MoSe$_2$ Heterostructure

## TL;DR

This study demonstrates a giant, tunable Rashba-type spin splitting in PtSe₂/MoSe₂ heterostructures, with potential applications in spin field-effect transistors, achieved through first-principles calculations revealing strong interfacial spin-orbit coupling.

## Contribution

The paper introduces a large, tunable Rashba spin splitting in a 2D heterostructure, supported by first-principles calculations, and proposes a novel spintronic device model utilizing this effect.

## Key findings

- Spin splitting energy of 110 meV at the Γ point.
- Generalized Rashba constant η_R as large as 1.3 eV·Å.
- Effective tuning of η_R via biaxial strain and electric field.

## Abstract

We report a giant Rashba-type spin splitting in two-dimensional heterostructure PtSe$_2$/MoSe$_2$ with first-principles calculations. We obtain a large value of spin splitting energy 110 meV at the momentum offset $k_0$=0.23 \AA$^{-1}$ around $\mathrm{\Gamma}$ point, arising from the emerging strong interfacial spin-orbital coupling induced by the hybridization between PtSe$_2$ and MoSe$_2$. Moreover, we find that the band dispersion close to valence band maximum around $\Gamma$ point can be well approximated by the generalized Rashba Hamiltonian $H(k_{||})=-\frac{\hbar^2 k_{||}^2}{2m}+c k_{||}+\alpha_R \vec{\sigma}\cdot(\vec{k}_{||} \times \vec{z})$. It is found that the generalized Rashba constant $\eta_R=c+\alpha_R$ in PtSe$_2$/MoSe$_2$ is as large as 1.3 eV$\cdot\text{\AA}$, and importantly $\eta_R$ can be effectively tuned by biaxial strain and external out-of-plane electrical field, presenting a potential application for the spin field-effect transistor. In addition, with the spin-valley physics at $\mathrm{K}/\mathrm{K}'$ points in monolayer MoSe$_2$, we propose a promising model for spin field-effect transistor with opto-valleytronic spin injection based on PtSe$_2$/MoSe$_2$ heterostructure.