# Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO$_3$-KTaO$_3$ with strong spin-orbit coupling

## TL;DR

This study reports the observation of planar Hall effect and anisotropic magnetoresistance in a novel LaVO$_3$-KTaO$_3$ interface, indicating strong spin-orbit coupling and complex magnetic phenomena.

## Contribution

It introduces a new conducting interface between LaVO$_3$ and KTaO$_3$ and explores its spin-orbit related transport properties, revealing phenomena not fully explained by existing models.

## Key findings

- Observation of two-fold AMR at low fields
- Transition from two-fold to four-fold AMR at high fields
- Indications of complex interplay between spin-orbit coupling and magnetic effects

## Abstract

Among the perovskite oxide family, KTaO$_3$ (KTO) has recently attracted considerable interest as a possible system for the realization of the Rashba effect. In this work, we improvise a novel conducting interface by juxtaposing KTO with another insulator, namely LaVO$_3$ (LVO) and report planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) measurements. This interface exhibits a signature of strong spin-orbit coupling. Our experimental observation of two fold AMR at low magnetic fields can be intuitively understood using a phenomenological theory for a Rashba spin-split system. At high fields ($\sim$8 T), we see a two fold to four fold transition in the AMR that could not be explained using only Rashba spin-split energy spectra. We speculate that it might be generated through an intricate process arising from the interplay between strong spin-orbit coupling, broken inversion symmetery, relativistic conduction electron and possible uncompensated localized vanadium spins.