# Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory

## TL;DR

This paper introduces a novel band-pass spin filtering design for STT-MRAM that significantly enhances energy efficiency and magnetoresistance compared to traditional devices, using advanced spin transport modeling.

## Contribution

The paper presents a new heterostructure design for STT-MRAM utilizing band-pass spin filtering with anti-reflective regions, achieving ultra-high TMR and improved energy efficiency.

## Key findings

- Achieved ultra-high TMR of 3.5×10^4 in the proposed design.
- Demonstrated 1100% increase in energy efficiency over traditional trilayer MTJ.
- Provided detailed probabilistic switching and energy analysis for the new device.

## Abstract

We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as anti-reflection coating and resonance for spintronic devices, we present the design of an STT-MRAM device with improved features when compared with a traditional trilayer device. The device consists of a superlattice heterostructure terminated with the anti-reflective regions sandwiched between the fixed and free ferromagnetic layers. Employing the Green's function spin transport formalism coupled self-consistently with the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation, we present the design of an STT-MRAM based on the band-pass filtering having an ultra-high TMR (3.5*10e4) and large spin current. We demonstrate that the STT-MRAM design having band-pass spin filtering are nearly 1100% more energy efficient than traditional trilayer magnetic tunnel junction (MTJ) based STT-MRAM. We also present detailed probabilistic switching and energy analysis for a trilayer MTJ and band-pass filtering based STT-MRAM. Our predictions serve as a template to consider the heterostructures for next-generation spintronic device applications.