Scaling Analysis of Anomalous Hall Resistivity in the Co$_{2}$TiAl Heusler Alloy

TL;DR

This study investigates the magnetotransport properties of Co$_{2}$TiAl Heusler alloy, revealing the dominant extrinsic scattering mechanism behind anomalous Hall resistivity and linking electron-magnon scattering to side-jump contributions.

Contribution

It provides a detailed analysis of the scaling behavior of anomalous Hall resistivity and identifies skew scattering as the primary mechanism, connecting electron-magnon scattering to side-jump effects.

Findings

Extrinsic scattering dominates anomalous Hall resistivity.

Skew scattering is the main mechanism over side-jump.

Electron-magnon scattering links to side-jump contribution.

Abstract

A comprehensive magnetotransport study including resistivity ($\rho_{xx}$) at various fields, isothermal magnetoresistance and Hall resistivity ($\rho_{xy}$) has been carried out at different temperatures on the Co$_{2}$TiAl Heusler alloy. Co$_{2}$TiAl alloy shows a paramagnetic (PM) to ferromagnetic (FM) transition below the curie temperature (T$_{C}$) $\sim$ 125 K. In the FM region, resistivity and magnetoresistance reveals a spin flip electron-magnon scattering and the Hall resistivity unveils the anomalous Hall resistivity ($\rho_{xy}^{AH}$). Scaling of anomalous Hall resistivity with resistivity establishes the extrinsic scattering process responsible for the anomalous hall resistivity; however Skew scattering is the dominant mechanism compared to the side-jump contribution. A one to one correspondence between magnetoresistance and side-jump contribution to anomalous Hall resistivity verifies the electron-magnon scattering being the source of side-jump contribution to the anomalous hall resistivity.