# Non-Trivial Topological Phase in the Sn_{1-x}In_xTe Superconductor

## TL;DR

This study reveals a non-trivial topological phase in the Sn_{1-x}In_xTe superconductor, showing how In doping influences its electronic structure and topological surface states, with potential implications for topological superconductivity.

## Contribution

The paper demonstrates the existence of a non-trivial topological phase in Sn_{1-x}In_xTe and details how In doping affects its topological surface states and electronic properties.

## Key findings

- Band gap decreases with In content, becoming metallic for x>0.1.
- Topological invariant indicates a non-trivial phase with mirror Chern number n_M = -2.
- Topologically protected surface states are identified and affected by In doping.

## Abstract

Whereas SnTe is a inverted band gap topological crystalline insulator, the topological phase of the alloy Sn_{1-x}In_xTe, a topological superconductor candidate, has not been clearly studied so far. Our calculations show that the Sn_{1-x}In_xTe band gap reduces by increasing the In content, becoming a metal for x>0.1. However, the band inversion at the fcc L point for both gapped and gapless phases has been maintained. Furthermore, the computed topological invariant shows a non-trivial phase with a mirror Chern number n_M = -2 for In concentrations of x=0.03125, x=0.125, and x=0.25. We also identify pairs of topologically protected states on the (001) surface of Sn_{1-x}In_xTe with +/- i mirror eigenvalues. The character of these topological states is affected by In dopant. As the In content x increases, the Dirac crossing point moves further away from the L point, and the Fermi velocity of the topological states increases significantly. Our results demonstrate a non-trivial topological phase for the superconductor Sn_{1-x}In_xTe, and provide a detailed description of the topological state properties.