Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 {\mu}m

TL;DR

This study investigates how emission wavelength influences s-p splitting in InGaAs/GaAs quantum dots, revealing an inverse relationship and highlighting the role of indium content in tailoring electronic properties for nanophotonics.

Contribution

It provides experimental and theoretical insights into the relationship between emission wavelength and s-p energy splitting, emphasizing indium content as a key tuning parameter.

Findings

Inverse dependence of s-p splitting on emission energy

Indium content variations affect electronic structure

Quantum dot engineering for nanophotonic applications

Abstract

The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between s-shell and p-shell shows an inverse dependence on the emission energy. The experimental data are compared with the results of confined states calculations, where the impact of the size and composition in the investigated structures is simulated within the 8-band $\mathbf{k}\cdot\mathbf{p}$ model. On this basis, the experimental observation is attributed mainly to changes in indium content within individual quantum dots, indicating a way of engineering and selecting a desired quantum dot, whose electronic structure is the most suitable for a given nanophotonic application.