Magnetic Skyrmion Field-Effect Transistors

TL;DR

This paper introduces a novel skyrmion field-effect transistor that leverages gate-controlled Dzyaloshinskii-Moriya interaction to enable low-power, multi-bit logic operations through large transverse skyrmion motion, expanding potential spintronic device functionalities.

Contribution

It proposes a new skyrmion transistor design utilizing inhomogeneous Dzyaloshinskii-Moriya interaction to control skyrmion motion for logic applications.

Findings

Demonstrates large transverse skyrmion motion due to inhomogeneous Dzyaloshinskii-Moriya interaction.

Enables multi-bit operation and Boolean functions in a skyrmion-based device.

Suggests potential for low-power spintronic logic devices.

Abstract

Magnetic skyrmions are of considerable interest for low-power memory and logic devices because of high speed at low current and high stability due to topological protection. We propose a skyrmion field-effect transistor based on a gate-controlled Dzyaloshinskii-Moriya interaction. A key working principle of the proposed skyrmion field-effect transistor is a large transverse motion of skyrmion, caused by an effective equilibrium damping-like spin-orbit torque due to spatially inhomogeneous Dzyaloshinskii-Moriya interaction. This large transverse motion can be categorized as the skyrmion Hall effect, but has been unrecognized previously. The propose device is capable of multi-bit operation and Boolean functions, and thus is expected to serve as a low-power logic device based on the magnetic solitons.