TCAD model for TeraFET detectors operating in a large dynamic range

TL;DR

This paper develops TCAD models for various TeraFET detectors operating in a wide dynamic range, accurately capturing their behavior and saturation effects across different materials.

Contribution

It introduces validated TCAD models for TeraFETs that incorporate response saturation mechanisms, enhancing understanding of their operation in terahertz detection.

Findings

Models agree with experimental data for AlGaAs/InGaAs HFETs

Models capture response saturation effects at high THz intensities

Different saturation mechanisms identified for various material systems

Abstract

We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling results are in good agreement with the experimental data for the AlGaAs/InGaAs heterostructure FETs (HFETs) and, to the low end of the dynamic range, with the analytical theory of the TeraFET detectors. The models incorporate the response saturation effect at high intensities of the THz radiation observed in experiments and reveal the physics of the response saturation associated with different mechanisms for different material systems. These mechanisms include the gate leakage, the velocity saturation and the avalanche effect.