Tuning electronic and optical properties of free-standing Sn2Bi monolayer stabilized by hydrogenation
Mohammad Ali Mohebpour, Sahar Izadi Vishkayi, Meysam Bagheri Tagani

TL;DR
This study explores how hydrogenation stabilizes free-standing Sn2Bi monolayers and demonstrates tunable electronic and optical properties via strain and electric fields, highlighting potential applications in optoelectronics and energy devices.
Contribution
It provides a comprehensive DFT analysis of hydrogenated Sn2Bi monolayers, revealing tunable band gaps and optical properties, and introduces strain as a tool for property manipulation.
Findings
Band gap increased by 80% after hydrogenation.
Strain can tune the band gap from 0.2 to 1.6 eV.
Monolayer exhibits metallic and transparent optical properties.
Abstract
In this study, we systematically investigated the structural, mechanical, electronic and optical properties of Sn2Bi monolayer, a sheet experimentally synthesized recently [PRL, 121, 126801 (2018)] which has been hydrogenated (Sn2BiH2) to stabilize free-standing form using density functional theory (DFT). For tuning the band structure and electronic properties, the mechanical strain and electric field are used. Our investigations show that in this free-standing sample, there are electron flat bands and free hole bands like the recently synthesized sample on silicon wafer, which provide the possibility of having strongly localized electrons and free holes with high mobility. Also, the band gap of Sn2BiH2 monolayer has experienced a growth of 80% compared with the experimental sample. The relevant results to strain suggest that the band gap can be properly manipulated by biaxial strain…
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