# Gating effects in antiferromagnetic CuMnAs

## TL;DR

This paper investigates how an electric field influences the resistivity of CuMnAs antiferromagnetic thin films, revealing reversible effects and providing detailed electronic property measurements relevant for spintronics applications.

## Contribution

It demonstrates the reversible electric field effect on CuMnAs resistivity using ionic liquid gating, and independently characterizes its electronic properties.

## Key findings

- Reversible resistivity change under electric field
- Independent determination of carrier type and mobility
- Potential implications for antiferromagnetic spintronics

## Abstract

Antiferromagnets (AFs) attract much attention due to potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control properties and the N\'eel vector direction of AFs. Among AFs, CuMnAs has been shown to exhibit specific properties that result in the existence of the current-induced spin-orbit torques commensurate with spin directions and topological Dirac quasiparticles. Here, we report on the observation of a reversible effect of an electric field on the resistivity of CuMnAs thin films, employing ionic liquid as a gate insulator. The data allow to determine the carrier type, concentration, and mobility independently of the Hall effect that may be affected by an anomalous component.