Electric selective activation of memristive interfaces in TaO$_x$-based devices
C. Ferreyra, M. J. S\'anchez, M. Aguirre, C. Acha, S. Bengi\'o, J., Lecourt, U. L\"uders, D. Rubi

TL;DR
This paper demonstrates that in Ta₂O₅-based memristive devices, selective activation of interfaces enables control over multilevel resistance states, which can be used for neuromorphic and non-traditional logic applications.
Contribution
It introduces a simple, scalable fabrication method for memristive devices with tunable multilevel resistance states through interface activation control.
Findings
Selective interface activation controls resistance loops
Physical origin linked to oxygen vacancy electromigration
Devices exhibit multiple stable intermediate states
Abstract
The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for TaO-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling the (a)symmetry of the applied stimuli and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different zones of the active TaO layer: a central -- bulk -- one and…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Neuroscience and Neural Engineering · Photoreceptor and optogenetics research
