# Robust magnetotransport in disordered ferromagnetic kagome layers with quantum anomalous Hall effect

## TL;DR

This paper numerically investigates disordered ferromagnetic kagome layers, revealing robust domain-wall magnetoresistance linked to the quantum anomalous Hall effect, with potential implications for spintronic applications.

## Contribution

It demonstrates that kagome layered materials exhibit large, robust domain-wall magnetoresistance related to the quantum anomalous Hall effect, unaffected by disorder or domain-wall thickness.

## Key findings

- Large domain-wall magnetoresistance observed in kagome layers.
- Magnetoresistance is robust against disorder and domain-wall thickness.
- Kagome layers show strong magnetic anisotropy and quantum anomalous Hall effect.

## Abstract

The magnetotransport properties of disordered ferromagnetic kagome layers are investigated numerically. We show that a large domain-wall magnetoresistance or negative magnetoresistance can be realized in kagome layered materials (e.g. Fe$_3$Sn$_2$, Co$_3$Sn$_2$S$_2$, and Mn$_3$Sn), which show the quantum anomalous Hall effect. The kagome layers show a strong magnetic anisotropy and a large magnetoresistance depending on their magnetic texture. These domain-wall magnetoresistances are expected to be robust against disorder and observed irrespective of the domain-wall thickness, in contrast to conventional domain-wall magnetoresistance in ferromagnetic metals.