# Prediction of the spin triplet two-electron quantum dots in Si: towards controlled quantum simulations of magnetic systems

## TL;DR

This paper demonstrates that two-electron quantum dots in silicon can have a triplet ground state, unlike in single-valley materials, enabling new possibilities for quantum simulation of magnetic systems.

## Contribution

It numerically shows the possibility of triplet ground states in silicon quantum dots, expanding the potential for quantum simulations in multi-valley materials.

## Key findings

- Silicon quantum dots can have a triplet ground state.
- Predicted singlet-triplet level crossing in Si quantum dots.
- Potential for quantum simulation of magnetic systems.

## Abstract

Ground state of two-electron quantum dots in single-valley materials like GaAs is always a spin singlet regardless of what the potential and interactions are. This statement cannot be generalized to the multi-valley materials like $n$-doped Si. Here we calculate numerically the spectrum of a two-electron Si quantum dot and show that the dot with the lateral size of several nm can have the spin triplet ground state which is impossible in the single-valley materials. Predicted singlet-triplet level crossing in two-electron Si quantum dots can potentially establish the platform for quantum simulation of magnetic many body systems based on quantum dots. We suggest several examples of such systems that open a way to controlled quantum simulations within the condensed matter setting.