# High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

## TL;DR

This paper presents a high-temperature droplet epitaxy method for creating symmetric GaAs/AlGaAs quantum dots with improved optical quality, addressing defect issues and enabling quantum photonics applications.

## Contribution

It introduces a novel high-temperature droplet epitaxy process that enhances quantum dot symmetry and optical quality by controlling arsenization dynamics.

## Key findings

- Optimized growth parameters yield symmetric quantum dots.
- High-temperature process reduces material defects.
- Quantum dots exhibit desired emission wavelengths.

## Abstract

We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self-assemble with the desired emission wavelength and highly symmetric shape while maintaining a high optical quality. The role of the growth parameters during the droplet arsenization is discussed and modelled.