Experimental observation of coupled valley and spin Hall effect in p-doped WSe2 devices
Terry Y.T. Hung, Avinash Rustagi, Shengjiao Zhang, Pramey Upadhyaya,, and Zhihong Chen

TL;DR
This paper reports the experimental observation of coupled valley and spin Hall effects in p-doped WSe2 devices, demonstrating out-of-plane spin polarization and its detection, advancing spintronic applications with 2D materials.
Contribution
It provides the first experimental evidence of coupled valley and spin Hall effects in monolayer WSe2, enabling out-of-plane spin polarization without external magnetic fields.
Findings
Electrical generation of out-of-plane spin polarization in WSe2
Detection of spin signals via nonlocal spin valve on graphene
Confirmation of coupled valley and spin Hall effects in 2D TMDs
Abstract
Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have successfully switched magnets with in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) through spin orbit torque (SOT) mechanism. It is generally accepted that PMA magnets are preferred over IMA magnets in data storage applications owing to their large thermal stability even at ultra scaled dimensions. However, SOT switching of PMA magnets by conventional GSHE materials requires either a small external magnetic field, a local dipolar field, or introducing tilted anisotropy to break the symmetry with respect to the magnetization. To deterministically switch a PMA without any additional assistance, nonconventional GSHE materials…
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Taxonomy
Topics2D Materials and Applications · Magnetic properties of thin films · Advanced Memory and Neural Computing
