3-D Atomic Mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices

TL;DR

This study provides 3-D atomic-level maps of interfacial roughness in Si/SiGe superlattices, revealing how growth temperature influences roughness, correlation length, and interfacial abruptness, which are crucial for optical and electronic properties.

Contribution

The paper introduces a method for 3-D atomistic mapping of buried interfaces in superlattices and analyzes how growth temperature affects interfacial roughness and correlation length.

Findings

Interfacial roughness varies with growth temperature, from 0.2 nm to 0.3 nm.

Correlation length decreases with increasing temperature, from 10.1 nm to 8.1 nm.

Lower growth temperature improves interfacial abruptness by 30%.

Abstract

The interfacial abruptness and uniformity in heterostructures are critical to control their electronic and optical properties. With this perspective, this work demonstrates the 3-D atomistic-level mapping of the roughness and uniformity of buried epitaxial interfaces in Si/SiGe superlattices with a layer thickness in the 1.5-7.5 nm range. Herein, 3-D atom-by-atom maps were acquired and processed to generate iso-concentration surfaces highlighting local fluctuations in content at each interface. These generated surfaces were subsequently utilized to map the interfacial roughness and its spatial correlation length. The analysis revealed that the root mean squared roughness of the buried interfaces in the investigated superlattices is sensitive to the growth temperature with a value varying from about 0.2 nm (+/- 13%) to about 0.3 nm (+/- 11.5%) in the temperature range of 500-650 Celsius. The estimated horizontal correlation lengths were found to be 8.1 nm (+/- 5.8%) at 650 Celsius and 10.1 nm (+/- 6.2%) at 500 Celsius. Additionally, reducing the growth temperature was found to improve the interfacial abruptness, with 30 % smaller interfacial width is obtained at 500 Celsius. This behavior is attributed to the thermally activated atomic exchange at the surface during the heteroepitaxy. Finally, by testing different optical models with increasing levels of interfacial complexity, it is demonstrated that the observed atomic-level roughening at the interface must be accounted for to accurately describe the optical response of Si/SiGe heterostructures.