# C\'alculo de constantes \'opticas de peliculas delgadas de Silicio compensado a trav\'es del m\'etodo de Swanepoel

## TL;DR

This paper characterizes the optical constants of compensated thin silicon films using Swanepoel's method, revealing differences in refractive index and dielectric properties compared to pure silicon, with implications for understanding their electronic structure.

## Contribution

It applies Swanepoel's model to determine optical constants of compensated silicon films and compares their properties to pure silicon, highlighting effects of compensation on optical behavior.

## Key findings

- Refractive index increases at low wavelengths for both films.
- Dielectric constant values align with literature for compensated silicon.
- Band gap decreases from 1.11 eV to 0.7275 eV due to compensation.

## Abstract

Characterization and determination of the optical constants for thin film silicon compensated through the transmittance spectrum is presented. Such properties were determined by R. Swanepoel model. Comparison between the refractive indices of pure silicon and silicon compensated. Increasing refractive index behavior at low wavelengths in both plots was observed. The difference lies in the concentration and type of element that has been added to the thin film. The behavior of the dielectric constant was studied, their relationship with the refractive index. It is found that the value of the dielectric constant to a thin film of silicon compensated agree with those reported in the literature. The reported value of the gap for pure silicon corresponds to $ 1.11eV $ and the value of the gap for the sample corresponds to $ 0.7275eV $, the discrepancy is due to the level of concentration in the compensated silicon film.