# Perspective: Heusler interfaces -- opportunities beyond spintronics?

## TL;DR

This paper explores the potential of Heusler compound interfaces beyond spintronics, emphasizing their integration with semiconductor technology and highlighting future research challenges.

## Contribution

It presents a vision for Heusler interfaces, focusing on opportunities beyond spintronics and addressing fabrication challenges for electronic applications.

## Key findings

- Heusler compounds can be epitaxially grown on semiconductor substrates.
- Heusler interfaces offer opportunities for new emergent properties.
- Challenges include controlling stoichiometry and interface quality.

## Abstract

Heusler compounds, in both cubic and hexagonal polymorphs, exhibit a remarkable range of electronic, magnetic, elastic, and topological properties, rivaling that of the transition metal oxides. To date, research on these quantum materials has focused primarily on bulk magnetic and thermoelectric properties or on applications in spintronics. More broadly, however, Heuslers provide a platform for discovery and manipulation of emergent properties at well-defined crystalline interfaces. Here, motivated by advances in the epitaxial growth of layered Heusler heterostructures, I present a vision for Heusler interfaces, focusing on the frontiers and challenges that lie beyond spintronics. The ability to grow these materials epitaxially on technologically important semiconductor substrates, such as GaAs, Ge, and Si, provides a direct path for their integration with modern electronics. Further advances will require new methods to control the stoichiometry and defects to "electronic grade" quality, and to control the interface abruptness and ordering at the atomic scale.