Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate

TL;DR

This study investigates the splitting of heavy-hole bands in p-type InAs grown on GaAs using magnetotransport and mobility spectrum analysis, revealing temperature-dependent band behavior and validating models with simulations.

Contribution

It presents the first detailed observation of heavy-hole band splitting in p-type InAs on GaAs using advanced mobility spectrum analysis and compares results with theoretical simulations.

Findings

Four-channel conductivity observed at low temperatures

Significant heavy-hole band splitting below 55 K

Good agreement between experimental data and simulations

Abstract

High quality berylium doped InAs layer grown by MBE on GaAs substrate has been examined via magnetotransport measurements and high resolution quantitative mobility spectrum analysis in the range from 5 to 300 K and up to 15 T magnetic field. The layer homogenity and dopant concentration has been proofed via HR-SIMS. The results shew four channel conductivity and essential splitting of the most populated holelike channel below 55 K. The multilayer model concluded from the QMSA results has been compared with nextnano simulation.