Non-quasi-static effects in graphene field-effect transistors under high-frequency operation

TL;DR

This paper develops a small-signal non-quasi-static model for graphene FETs that accurately predicts high-frequency behavior, bridging the gap between quasi-static assumptions and dynamic effects for circuit simulation.

Contribution

It introduces a novel analytical NQS model for GFETs derived from drift-diffusion equations, enabling accurate high-frequency circuit simulations beyond the quasi-static approximation.

Findings

The NQS model matches multisegment simulations for high-frequency operation.

It simplifies to the QS model below approximately one-fourth of the cut-off frequency.

The model facilitates integration into standard circuit simulators for GFETs.

Abstract

We have investigated the non-quasi-static (NQS) effects in graphene field-effect transistors (GFETs), which are relevant for GFET operation at high frequencies as a result of significant carrier inertia. A small-signal NQS model is derived from the analytical solution of drift-diffusion equation coupled with the continuity equation, which can be expressed in terms of modified Bessel functions of the first kind. The NQS model can be conveniently simplified to provide an equivalent circuit of lumped elements ready to be used in standard circuit simulators. Taking into account only first-order NQS effects, accurate GFET based circuit simulations up to several times the cut-off frequency (fT) can be performed. Notably, it reduces to the quasi-static (QS) approach when the operation frequency is below ~fT/4. To validate the NQS model, we have compared its outcome against simulations based on a multisegment approach consisting of breaking down the channel length in N equal segments described by the QS model each one.