# Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots

## TL;DR

This study explores how microwave radiation influences single-electron tunneling in InAs/InP nanowire quantum dots, revealing complex behaviors like current reversals and Coulomb diamond modifications driven by quantum and electromagnetic interactions.

## Contribution

It demonstrates the impact of off-resonant microwave fields on tunneling in heterostructured nanowires with quantum dots, highlighting the role of voltage fluctuations and energy level interplay.

## Key findings

- Microwave power modulates Coulomb diamond features.
- Multiple current polarity reversals observed.
- Tunneling behavior modeled by voltage fluctuations.

## Abstract

With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires include InAs quantum dots (QDs) and exhibit different tunnel-current regimes. In particular, for source-drain bias up to few mV Coulomb diamonds spread with increasing contrast as a function of microwave power and present multiple current polarity reversals. This behavior can be modelled in terms of voltage fluctuations induced by the microwave field and presents features that depend on the interplay of the discrete energy levels that contribute to the tunneling process.