Abrupt Enhancement of Spin-Orbit Scattering Time in Ultrathin Semimetallic SrIrO$_3$ Close to the Metal-Insulator Transition

TL;DR

This study investigates spin relaxation in ultrathin SrIrO3 films, revealing an abrupt increase in spin-orbit scattering time near the metal-insulator transition, likely due to strong electron correlations affecting spin scattering.

Contribution

It demonstrates the abrupt enhancement of spin-orbit scattering time in ultrathin SrIrO3 films near the metal-insulator transition, highlighting the role of electron correlations.

Findings

Charge mobility increases as film thickness decreases.

Spin-orbit scattering time shows abrupt enhancement near critical thickness.

Electron correlations likely suppress spin scattering in ultrathin films.

Abstract

We report a magnetotransport study of spin relaxation in 1.4-21.2 nm epitaxial SrIrO$_3$ thin films coherently strained on SrTiO$_3$ substrates. Fully charge compensated semimetallic transport has been observed in SrIrO$_3$ films thicker than 1.6 nm, where the charge mobility at 10 K increases from 45 cm$^2$/Vs to 150 cm$^2$/Vs with decreasing film thickness. In the two-dimensional regime, the charge dephasing and spin-orbit scattering lengths extracted from the weak localization/anti-localization effects show power-law dependence on temperature, pointing to the important role of electron-electron interaction. The spin-orbit scattering time $\tau_\text{so}$ exhibits an Elliott-Yafet mechanism dominated quasi-linear dependence on the momentum relaxation time $\tau_\text{p}$. Ultrathin films approaching the critical thickness of metal-insulator transition show an abrupt enhancement in $\tau_\text{so}$, with the corresponding $\tau_\text{so}/\tau_\text{p}$ about 7.6 times of the value for thicker films. A likely origin for such unusual enhancement is the onset of strong electron correlation, which leads to charge gap formation and suppresses spin scattering.