# Uniaxial stress controlled anisotropic Rashba effects and carriers-based currents in BiTeI monolayer semiconductor

## TL;DR

This study demonstrates how uniaxial stress can tune the anisotropic Rashba effects and spin-dependent currents in BiTeI monolayer, advancing the design of spintronic devices with controllable properties.

## Contribution

It introduces a combined first-principles and model approach to control Rashba effects in BiTeI monolayer using uniaxial stress, including out-of-plane spin components.

## Key findings

- Uniaxial stress induces anisotropic Rashba effects with out-of-plane spin components.
- Electric fields can generate charge and spin currents in stressed BiTeI monolayer.
- Stress control enables tunable spintronic functionalities in 2D materials.

## Abstract

Manipulation of Rashba effects in two-dimensional (2D) electron systems is highly desirable for controllable applications in spintronics and optoelectronics. Here, by combining first-principles investigation and model analysis, we use uniaxial stress to control BiTeI monolayer as a Rashba 2D semiconductor for useful spin and transport properties. We find that the stress-driven electron system can be described by an effective anisotropic Rashba model including all the three Pauli matrixes, and uniaxial stress allows an out-of-plane spin component. When appropriate electron carriers are introduced into the monolayer, an in-plane electric field can induce a charge current and three spin current components (including that based on the out-of-plane spin) because of the reduced symmetry. Therefore, uniaxial stress can be used to control such Rashba 2D electron systems as the BiTeI monolayer for seeking promising devices.