Comprehensive Three-dimensional Computational Model Enables Design of Nanostructured Infrared Detectors

TL;DR

This paper introduces a comprehensive 3-D computational model for nanowire-based infrared detectors, integrating optical and electrical simulations to better understand carrier dynamics and improve device performance.

Contribution

It presents the first combined 3-D optoelectronic transient and photoresponse model for nanowires, linking carrier lifetimes with material properties and device responsivities.

Findings

Model reveals detailed carrier lifetime dynamics.

Predicts responsivities and detectivities of nanowire photodetectors.

Unveils the importance of 3-D geometry in carrier behavior.

Abstract

Due to the unique three-dimensional (3-D) geometries of nanowire-i.e., large surface-to-volume ratios and smaller cross-sections at the nanowire-substrate interfaces-their carrier dynamics are much more complicated than those of thin films. Therefore, analytical solutions cannot be found for these nanostructures and a more comprehensive scheme of 3-D modeling is necessary to interpret their intrinsic carrier dynamics. To date, most modeling studies for nanowires have focused on electromagnetic properties (e.g. optical modes and optical absorption). However, very few studies have combined optical and electrical simulations together to probe the temporal and spatial carrier motions within nanowires. In this work, we present a comprehensive nanowire optoelectronic transient model and photoresponse model, allowing us to investigate carrier lifetimes and their fundamental correlations with material properties, as well as responsivities and detectivities for nanowire-based optical devices for photodetection (i.e., photodetectors). We believe this work can stimulate further experimental and theoretical work and unveil the real strength of 3-D computational models for exploring carrier dynamics in nanowires and nanostructured materials.