# Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors

## TL;DR

This paper presents an analytical drain current model for one-dimensional ballistic RFETs with Schottky contacts, incorporating band-to-band tunneling and comparing multi-gate configurations.

## Contribution

It introduces a simplified analytical model based on WKB approximation for RFETs, including tunneling effects, and compares two-gate and triple-gate device configurations.

## Key findings

- Analytical solution for the Landauer integral derived.
- Model accurately accounts for electron and hole tunneling.
- Comparison shows differences between two-gate and triple-gate RFETs.

## Abstract

A simple model based on the WKB approximation for one-dimensional ballistic multi--gate reconfigurable field--effect transistors (RFETs) with Schottky-Barrier contacts has been developed for the drain current taking into account electron and hole band-to-band tunneling. By using a proper approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical solution for the Landauer integral can be obtained. A comparative analysis of the two-gate and triple-gate RFETs is performed based on the numerical integration of the current integral.