A Time Domain Coupled Electronic-Optical Simulation Model for GaN-based LEDs

TL;DR

This paper introduces a novel time-domain coupled electronic-optical simulation model for GaN-based LEDs, integrating carrier transport and light emission processes to improve understanding and design accuracy.

Contribution

It presents the first coupled carrier-photon model in the time domain for GaN LEDs, combining drift-diffusion and Maxwell's equations with experimental calibration.

Findings

Model accurately predicts external quantum efficiency (EQE).

Provides insights into carrier-photon interactions in GaN LEDs.

Enhances simulation capabilities for LED design.

Abstract

In this paper, we present a coupled carrier-photon model that accounts for the time-domain interactions between carrier transport and light emission in Gallium Nitride (GaN)-based LEDs that hasn't been reported so far. Carrier transport is modeled using the drift-Diffusion formulation, whereas light emission and propagation is modeled using Maxwell's equations. The drift Diffusion equation is solved self-consistently with Poisson equation. The carrier transport and photon emission are coupled by formulating an appropriate relation between radiative recombinations and dipole sources such that the strength of the dipole sources is given by the radiative recombination rates gauged to an appropriate value. This gauging factor is obtained by calibrating the External Quantum Efficiency (EQE) of homojunction GaN LED with the experimental value.