# Manipulation of Valley Isospins in Strained Graphene for Valleytronics

## TL;DR

This paper demonstrates how strain engineering in graphene can manipulate valley isospins, leading to controllable quantum Hall conductance oscillations and valley-resolved Fano resonances, advancing valleytronics technology.

## Contribution

It introduces a method to control valley isospins in graphene via Gaussian-shaped strain, revealing new quantum phenomena relevant for valleytronic device development.

## Key findings

- Strain induces quantum Hall conductance oscillations.
- Observation of strain-induced Fano resonances.
- Valley degeneracy is lifted by interplay of magnetic fields.

## Abstract

Graphene's outstanding mechanical properties lend to strain engineering, allowing for future valleytronics and nanoelectromechanic applications. In this work, we have found that a Gaussian-shaped strain on a graphene p-n junction results in quantum Hall conductance oscillations due to the rotated angle between valley isospins at the graphene armchair edges. Furthermore, additional Fano resonances were observed as the value of the strain-induced pseudo-magnetic field approaches that of the external magnetic field. The lifted valley degeneracy, stemming from the interplay between the real and pseudo-magnetic fields, results in clearly valley-resolved Fano resonances. Exploring strain engineering as a means to control conductance through valley isospin manipulation is believed to open the door to potential graphene valleytronic devices.