# Magneto-transport properties of doped graphene

## TL;DR

This paper investigates how doping graphene with B, Si, and N alters its magneto-transport properties, revealing dopant-dependent electronic behaviors and quantum Hall effects that could impact future applications.

## Contribution

It provides a theoretical analysis of dopant-specific effects on graphene's electronic structure and quantum Hall phenomena using a generalized tight-binding model and Kubo formula.

## Key findings

- Doping can open a band gap in graphene.
- Doped graphene exhibits unique Landau level spectra.
- Quantum Hall conductivity shows dopant- and concentration-dependent features.

## Abstract

The effect due to doping by B, Si, N on the magneto-transport properties of graphene is investigated using the generalized tight-binding model in conjunction with the Kubo formula. The crucial electronic and transport properties are greatly diversified by the type of dopant and doping concentration. The contribution from the guest atoms may open a band gap, thereby giving rise to the rich Landau level energy spectra and consequently the unique quantum Hall conductivity. The Fermi energy-dependent quantum Hall effect appears as a step structure having both integer and half-integer plateaus. Doping leads to the occurrence of zero conductivity, unlike the plateau sequence for pristine graphene. The predicted dopant- and concentration-enriched quantum Hall effect for doped graphene should provide useful information for magneto-transport measurements and possible technological applications as well as metrology.