# Magneto-electronic properties of twisted bilayer graphene system

## TL;DR

This paper develops a generalized tight-binding model to explore the magneto-electronic properties of twisted bilayer graphene, revealing unique Landau-level phenomena and the effects of Moire superlattice structures.

## Contribution

It introduces a comprehensive model that includes all atomic interactions in twisted bilayer graphene, uncovering new magnetic quantization behaviors and Landau-level characteristics.

## Key findings

- Twisted bilayer graphene is a zero-gap semiconductor with Dirac cones.
- Rich magnetic quantization phenomena due to Moire zone folding.
- Landau-level spectrum shows hybridized features from different stacking configurations.

## Abstract

The generalized tight-binding model is developed to investigate the magneto-electronic properties in twisted bilayer graphene system. All the interlayer and intralayer atomic interactions are included in the Moire superlattice. The twisted bilayer graphene system is a zero-gap semiconductor with double-degenerate Dirac-cone structures, and saddle-point energy dispersions appearing at low energies for cases of small twisting angles. There exist rich and unique magnetic quantization phenomena, in which many Landau-level subgroups are induced due to specific Moire zone folding through modulating the various stacking angles. The Landau-level spectrum shows hybridized characteristics associated with the those in monolayer, and AA $\&$ AB stackings. The complex relations among the different sublattices on the same and different graphene layers are explored in detail.