Parametric Oscillation and amplification with gate controlled capacitor-within-capacitor

TL;DR

This paper introduces a novel capacitor-within-capacitor structure with doped nano-graphene junctions, enabling electronically and chemically tunable parametric oscillation and amplification.

Contribution

It presents a new capacitor-within-capacitor design with doped nano-graphene junctions for tunable parametric oscillation and amplification.

Findings

Demonstrated diode-interfaced parametric oscillations

Achieved electronically controlled doping of nano-graphene junctions

Showed potential for tunable amplification applications

Abstract

A Capacitor-within-Capacitor (CWC) is a nested electronic element that has two components: the cell (e.g., the outer capacitor) and the gate (e.g., the inner capacitor). The designations for the gate and cell may be interchanged. Here, an analysis and experimentation on a diode-interfaced parametric oscillations and amplification are described. By replacing the diode with a junction, made of doped nano-graphene films, we demonstrated a new structure whose doping may be electronically and chemically controlled.