Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication

TL;DR

This paper demonstrates the first monolithically integrated perovskite micro-disc lasers on silicon photonic chips using scalable top-down fabrication, achieving record low lasing thresholds and compatibility with CMOS processes.

Contribution

It introduces a novel top-down fabrication process for perovskite lasers integrated into silicon photonics, overcoming previous chemical sensitivity challenges.

Findings

Record low lasing threshold of 4.7 μJ/cm² at room temperature.

First demonstration of monolithic integration of perovskite lasers with silicon PICs.

CMOS-compatible fabrication enabling scalable production.

Abstract

Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through costly and inefficient hybrid integration of III-V semiconductors. Until now however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography and therefore on existing semiconductor manufacturing infrastructure has been established. Here, the first methylammonium lead iodide perovskite micro-disc lasers monolithically integrated into silicon nitride PICs by such a top-down process is presented. The lasers show a record low lasing threshold of 4.7 ${\mu}$Jcm$^{-2}$ at room temperature for monolithically integrated lasers, which are CMOS compatible and can be integrated in the back-end-of-line (BEOL) processes.