# Electric bias-controlled switching of magnetization of ferrimagnetically coupled Mn delta-layers in a GaAs-AlGaAs quantum well

## TL;DR

This paper proposes a model for electrically controlled magnetization switching in a GaAs-AlGaAs quantum well with Mn delta-layers, enabling ultrafast, field-free magnetic state control suitable for spintronic applications.

## Contribution

It introduces a novel synthetic ferrimagnetic semiconductor structure with electrically switchable magnetic coupling via gating, supporting ultrafast, field-free magnetization switching.

## Key findings

- Magnetic coupling can be switched between ferro- and antiferromagnetic states by gating.
- Ultrafast magnetization switching achieved with short electric bias pulses.
- Parameters for switching are within accessible technological ranges.

## Abstract

We suggest a model of synthetic ferrimagnetic semiconductor structure based on GaAs-AlGaAs quantum well doped by two Mn delta-layers. The coupling between the delta-layers is mediated by extra holes, and can be switched between ferro- and antiferromagnetic one by gating the structure. A proper choice of Mn concentrations in the delta-layers and of local degree of disorder enables fabrication of a ferrimagnetic structure supporting ultrafast switching of magnetization by short pulses of electric bias without an external magnetic field. The switching mechanism in the structure relies on kinetic spin exchange between the two delta-layers which is mediated by exchange scattering of electric-pulse heated holes by magnetic ions within the layers. Owing to specific interplay between characteristics of the exchange scattering, spin decay times, and the heat withdraw in the suggested synthetic ferrimagnetic semiconductor, the necessary parameters of electric-bias pulse are within the technologically accessible range, and do not contradict typical thermal kinetics of semiconductor structures.