# Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

## TL;DR

This paper reports the successful epitaxial growth of high-quality Bi2O2Se thin films on SrTiO3 substrates using pulsed laser deposition, highlighting their structural properties and electron mobility for potential electronic applications.

## Contribution

First demonstration of heteroepitaxial Bi2O2Se films on SrTiO3 via PLD, with detailed characterization of growth modes and mobility.

## Key findings

- Epitaxial growth with c axis perpendicular to surface
- Maximum electron mobility of 160 cm2/V-1s-1 at room temperature
- Interface scattering influences low-temperature mobility

## Abstract

Recently, Bi2O2Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted that high quality Bi2O2Se-related heterostructures may possess exotic physical phenomena, such as piezoelectricity and topological superconductivity. Herein, we report the first successful heteroepitaxial growth of Bi2O2Se films on SrTiO3 substrates via pulsed laser deposition (PLD) method. Films obtained under optimal conditions show an epitaxial growth with the c axis perpendicular to the film surface and the a and b axes parallel to the substrate. The growth mode transition to three dimensional (3D) island from quasi-2D layer of the heteroepitaxial Bi2O2Se films on SrTiO3 (001) substrates is observed as prolonging deposition time of films. The maximum value of electron mobility reaches 160 cm2/V-1s-1 at room temperature in a 70nm-thick film. The thickness dependent mobility provides evidence that interface-scattering is likely to be the limiting factor for the relatively low electron mobility at low temperature, implying that the interface engineering as an effective method to tune the low temperature electron mobility. Our work suggests the epitaxial Bi2O2Se films grown by PLD are promising for both fundamental study and practical applications.

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Source: https://tomesphere.com/paper/1907.07893