Quantum tunneling devices incorporating two-dimensional magnetic semiconductors

TL;DR

This paper reviews recent advances in quantum tunneling devices that use two-dimensional magnetic semiconductors, highlighting their unique properties and potential for high-performance spin-based quantum applications.

Contribution

It introduces novel quantum tunneling device concepts based on 2D magnetic semiconductors, specifically CrI₃, and discusses their fundamental and technological implications.

Findings

2D magnetic semiconductors enable new quantum tunneling phenomena

Devices with 2D materials can outperform traditional counterparts

CrI₃-based devices show promising spintronic properties

Abstract

Research in two-dimensional (2D) materials has experienced rapid growth in the past few years. In particular, various layered compounds exhibiting quantum phenomena, such as superconductivity and magnetism, have been isolated in atomically thin form, often in spite of their chemical instability. The nature of the 2D phases can be different than their bulk counterparts, making such systems attractive for fundamental studies. Owing to their high crystallinity and absence of dangling bonds, devices and heterostructures incorporating these materials may also show performance exceeding that of traditional films. In this roadmap article, we focus on a few recent developments in spin-based quantum devices utilizing the 2D magnetic semiconductor, CrI$_3$.