High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom

TL;DR

This paper reports a high-speed, waveguide-integrated silicon photodetector on a SiN-SOI platform with a record 14 GHz bandwidth, suitable for short reach data communication at 850 nm.

Contribution

It introduces a novel waveguide integrated Si photodetector with the highest reported bandwidth for Si devices, combining SiN and SOI technologies.

Findings

Responsivity of 0.44 A/W at 25 V bias

3dB bandwidth of 14 GHz at 20 V bias

Detailed optoelectronic characterization

Abstract

We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector responsivity of 0.44 A/W at 25 V bias. The frequency response of the photodetector is evaluated by coupling of a femtosecond laser source through SiN grating coupler of the integrated photodetector. We estimate a 3dB bandwidth of 14 GHz at 20 V bias, highest reported bandwidth for a waveguide integrated Si photodetector. We also present detailed optoelectronic DC and AC characterisation of the fabricated devices. The demonstrated integrated photodetector could enable an integrated solution for scaling of short reach data communication and connectivity.