Spin-valley locking, bulk quantum Hall effect and chiral surface state in a noncentrosymmetric Dirac semimetal BaMnSb$_2$
J.Y. Liu, J. Yu, J.L. Ning, H.M. Yi, L. Miao, L.J. Min, Y.F. Zhao, W., Ning, K.A. Lopez, Y.L. Zhu, T. Pillsbury, Y. B. Zhang, Y. Wang, J. Hu, H.B., Cao, F. Balakirev, F. Weickert, M. Jaime, Y. Lai, Kun Yang, J.W. Sun, N., Alem, V. Gopalan, C.Z. Chang, N. Samarth, C.X. Liu

TL;DR
This paper reports the discovery of spin-valley locking, quantum Hall effect, and chiral surface states in the bulk Dirac semimetal BaMnSb$_2$, revealing novel topological and spin-valley coupled phenomena in a noncentrosymmetric material.
Contribution
It demonstrates for the first time spin-valley locking and stacked quantum Hall effect in a bulk Dirac semimetal BaMnSb$_2$, combining experimental and theoretical analyses.
Findings
Spin-valley locking observed in bulk BaMnSb$_2$
Stacked quantum Hall effect with near-degenerate valley and spin states
Two-dimensional chiral surface state indicating topological quantum liquid
Abstract
Spin-valley locking in the band structure of monolayers of MoS and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb. We find valley and spin are inherently coupled for both valence and conduction bands in this material. This is revealed by comprehensive studies using first principle calculations, tight-binding and effective model analyses, angle-resolved photoemission spectroscopy and quantum transport measurements. Moreover, this material also exhibits a stacked quantum Hall effect. The spin-valley degeneracy extracted from the plateau height of quantized Hall resistivity is close to 2. This result, together with the observed Landau level spin…
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