# Thermal evolution of silicon carbide electronic bands

## TL;DR

This study uses ab initio calculations to analyze how the electronic band structure of silicon carbide changes with temperature, providing insights crucial for high-temperature electronics and quantum defect applications.

## Contribution

It applies many-body perturbation theory to determine the temperature dependence of SiC bands, a novel approach for this material.

## Key findings

- Significant electron-phonon renormalization of the band gap at 0 K
- Different temperature behaviors of conduction and valence bands
- Theoretical results align with experimental observations

## Abstract

Direct observation of temperature dependence of individual bands of semiconductors for a wide temperature region is not straightforward, in particular. However, this fundamental property is a prerequisite in understanding the electron-phonon coupling of semiconductors. Here we apply \emph{ab initio} many body perturbation theory to the electron-phonon coupling on hexagonal silicon carbide (SiC) crystals and determine the temperature dependence of the bands. We find a significant electron-phonon renormalization of the band gap at 0~K. Both the conduction and valence bands shift at elevated temperatures exhibiting a different behavior. We compare our theoretical results with the observed thermal evolution of SiC band edges, and discuss our findings in the light of high temperature SiC electronics and defect qubits operation.