Modeling the computer memory based on the ferromagnet/superconductor multilayers
Serhii E. Shafraniuk, Ivan P. Nevirkovets, and Oleg A. Mukhanov

TL;DR
This paper presents a model for superconducting computer memory using ferromagnet/superconductor multilayers, demonstrating ultrafast switching and low energy consumption, suitable for superconducting computing circuits.
Contribution
The paper introduces a novel hybrid PS/SFT memory model that enables ultrafast, low-energy superconducting memory operations with detailed circuit-level analysis.
Findings
Memory cells can switch in under a nanosecond.
Energy per operation is below 100 femtojoules.
Model allows studying effects like noise and crosstalk.
Abstract
A model of superconducting computer memory exploiting the orthogonal spin transfer (OST) in the pseudospin valve (PS) that is controlled by the three-terminal Josephson superconducting-ferromagnetic transistor (SFT) is developed. The building blocks of the memory are hybrid PS and SFT structures. The memory model is formulated in terms of the equation-defined PS and SFT devices integrated into the PS/SFT memory cell (MC) circuit. Logical units "0" and "1" are associated with the two PS states respectively characterized by two different values of resistance. Elementary logical operations comprising the read/write processes occur when a word pulse applied to the SFT's injector coincides with the respective bit pulse acting on MC. Physically, a word pulse triggers SFT to a resistive state, causing the PS switching between the logical "0" and "1" states. Thus, the whole switching dynamics…
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Taxonomy
TopicsPhysics of Superconductivity and Magnetism · Quantum and electron transport phenomena · Magnetic properties of thin films
