# Electrical current switching of the noncollinear antiferromagnet Mn$_3$GaN

## TL;DR

This study demonstrates room-temperature electrical current switching of noncollinear antiferromagnetic Mn$_3$GaN/Pt bilayers, showing efficient manipulation of Hall resistance with significantly lower current densities than in single films, advancing AFM spintronics.

## Contribution

It reveals that Pt layers enable electrical switching of noncollinear AFM Mn$_3$GaN at lower currents, offering a new platform for AFM spintronics applications.

## Key findings

- Hall resistance can be manipulated by current pulses in bilayers
- Lower critical current density compared to single films
- Pt layer is essential for switching behavior

## Abstract

We report electrical current switching of noncollinear antiferromagnetic (AFM) Mn$_3$GaN/Pt bilayers at room temperature. The Hall resistance of these bilayers can be manipulated by applying a pulse current of $1.5\times10^6$~A/cm$^2$, whereas no significant change is observed up to $\sim10^8$~A/cm$^2$ in Mn$_3$GaN single films, indicating that the Pt layer plays an important role. In comparison with ferrimagnetic Mn$_3$GaN/Pt bilayers, a lower electrical current switching of noncollinear AFM Mn$_3$GaN is demonstrated, with a critical current density two orders of magnitude smaller. Our results highlight that a combination of a noncollinear AFM antiperovskite nitride and a spin-torque technique is a good platform of AFM spintronics.