# Segmented ion-trap fabrication using high precision stacked wafers

## TL;DR

This paper presents a high-precision laser-enhanced etching technique for fabricating multi-layer ion traps with complex geometries, enabling scalable quantum computing components with improved design flexibility.

## Contribution

Introduction of a laser-enhanced etching method for multi-layer ion traps that allows precise machining and alignment, facilitating advanced trap designs for quantum information processing.

## Key findings

- Successful fabrication of ion traps with integrated cavity-QED interfaces.
- Designs enabling two-dimensional ion shuttling with optimized potential barriers.
- Identification of fabrication constraints affecting trap design.

## Abstract

We describe the use of laser-enhanced etching of fused silica in order to build multi-layer ion traps. This technique offers high precision of both machining and alignment of adjacent wafers. As examples of designs taking advantage of this possibility, we describe traps for realizing two key elements of scaling trapped ion systems. The first is a trap for a cavity-QED interface between single ions and photons, in which the fabrication allows shapes that provide good electro-static shielding of the ion from charge build-up on the mirror surfaces. The second incorporates two X-junctions allowing two-dimensional shuttling of ions. Here we are able to investigate designs which explore a trade-off between pseudo-potential barriers and confinement at the junction center. In both cases we illustrate the design constraints arising from the fabrication.