Hole compensation effect in III-Mn-V dilute ferromagnetic semiconductors
Chi Xu, Mao Wang, Ye Yuan, Gerard Larkin, Manfred Helm, Shengqiang, Zhou
TL;DR
This study investigates how hole compensation via defect creation affects the magnetic properties of III-Mn-V dilute ferromagnetic semiconductors, confirming the p-d Zener model and highlighting the influence of defect energy levels.
Contribution
It provides a systematic analysis of hole compensation effects on magnetic properties across multiple materials, emphasizing the role of defect energy levels.
Findings
Curie temperature and magnetization decrease with increased hole compensation
Magnetic properties are influenced by defect energy level positions
Ion irradiation effectively manipulates magnetic properties
Abstract
A systematic study of hole compensation effect on magnetic properties, which is controlled by defect compensation through ion irradiation, in (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P is presented in this work. In all materials, both Curie temperature and magnetization decrease upon increasing the hole compensation, confirming the description of hole mediated ferromagnetism according to the p-d Zener model. The material dependence of Curie temperature and magnetization versus hole compensation reveals that the manipulation of magnetic properties in III-Mn-V dilute ferromagnetic semiconductors by ion irradiation is strongly influenced by the energy level location of the produced defect relative to the band edges in semiconductors.
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