# Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors

## TL;DR

This paper introduces a percolation-based theoretical framework to better understand charge transport in amorphous oxide semiconductors, highlighting its advantages over previous models that neglected percolation effects.

## Contribution

It formulates a novel percolation approach for the RB model, improving the theoretical description of charge transport in amorphous oxide semiconductors.

## Key findings

- Percolation approach outperforms previous models
- Provides a new recipe for theoretical analysis
- Highlights the importance of percolation in charge transport

## Abstract

Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies in the framework of this approach neglected so far the percolation nature of the phenomenon. In this article, a recipe for theoretical description of charge transport in the RB model is formulated using percolation arguments. Comparison with the results published so far evidences the superiority of the percolation approach.