# Percolation description of charge transport in amorphous oxide semiconductors

## TL;DR

This paper introduces a percolation-based theoretical framework for understanding charge transport in amorphous oxide semiconductors, addressing previous neglect of percolation effects and aligning theory with experimental data.

## Contribution

It formulates a novel percolation approach for charge transport in AOS, demonstrating its superiority over prior models and extracting disorder parameters from experiments.

## Key findings

- Percolation theory better explains charge transport in AOS.
- The approach aligns well with experimental data.
- Parameters of disorder potential are quantitatively identified.

## Abstract

The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the phenomenon. In this article, a recipe for theoretical description of charge transport in AOSs is formulated using the percolation arguments. Comparison with the previous theoretical studies shows a superiority of the percolation approach. The results of the percolation theory are compared to experimental data obtained in various InGaZnO materials revealing parameters of the disorder potential in such AOS.