# Charge carriers with fractional exclusion statistics in cuprates

## TL;DR

This paper demonstrates that charge carriers in cuprates can be described with fractional exclusion statistics, explaining experimental features and Fermi volume behavior in high-temperature superconductors.

## Contribution

It introduces a consistent application of fractional exclusion statistics to charge carriers in cuprates within a gauge approach, linking theory to experimental observations.

## Key findings

- Charge carriers exhibit exclusion statistics with parameter 1/2.
- Large Fermi volume of holes at high doping levels.
- Natural explanation for unusual properties of hole-doped cuprates.

## Abstract

We show that in the SU(2)XU(1) spin-charge gauge approach we developed earlier one can attribute consistently an exclusion statistics with parameter 1/2 to the spinless charge carriers of the t-J model in two dimensions(2D), as it occurs in one dimension (1D). Like the 1D case, the no-double occupation constraint is at the origin of this fractional exclusion statistics. With this statistics we recover a "large" Fermi volume of holes at high dopings, close to that of the tight binding approximation. Furthermore, the composite nature of the hole, made of charge and spin carriers only weakly bounded, can provide a natural explanation of many unusual experimental features of the hole-doped cuprates.