# Lattice matched Volmer-Weber growth of Fe$_3$Si on GaAs(001) -- the influence of the growth rate

## TL;DR

This study explores how varying the growth rate affects the formation and quality of lattice-matched Fe$_3$Si films on GaAs(001) using Volmer-Weber island growth, revealing the impact on defect formation and ordering.

## Contribution

It demonstrates the influence of growth rate on defect density and ordering in Fe$_3$Si/GaAs(001) heterostructures during island growth.

## Key findings

- Higher growth rates lead to defect-free layers with compositional disorder.
- Lower growth rates result in fully ordered Fe$_3$Si layers.
- Island coalescence forms continuous films with varying defect structures.

## Abstract

We investigate the formation of lattice matched single-crystalline Fe$_3$Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the epitaxial growth of isolated Fe$_3$Si islands up to the formation of continuous films as a result of island coalescence. We find coherent defect-free layers exhibiting compositional disorder near the Fe$_3$Si/GaAs-interface for higher growth rates, whereas they are fully ordered for lower growth rates.