Spherical nano-inhomogeneity with the Steigmann-Ogden interface model under general uniform far-field stress loading
Junbo Wang, Peng Yan, Leiting Dong, Satya N. Atluri

TL;DR
This paper derives an explicit analytical solution for the stress field around a spherical nano-inhomogeneity considering the Steigmann-Ogden interface model, highlighting size effects and interface bending resistance impacts.
Contribution
It introduces a novel explicit solution incorporating interface bending resistance via the Steigmann-Ogden model, extending prior work that only considered interface stretching resistance.
Findings
Stress fields differ significantly when considering interface bending resistance.
Certain stress components are invariant along specific circles in the inclusion.
A characteristic line indicates where stress concentration becomes severe.
Abstract
An explicit solution, considering the interface bending resistance as described by the Steigmann-Ogden interface model, is derived for the problem of a spherical nano-inhomogeneity (nanoscale void/inclusion) embedded in an infinite linear-elastic matrix under a general uniform far-field-stress (including tensile and shear stresses). The Papkovich-Neuber (P-N) general solutions, which are expressed in terms of spherical harmonics, are used to derive the analytical solution. A superposition technique is used to overcome the mathematical complexity brought on by the assumed interfacial residual stress in the Steigmann-Ogden interface model. Numerical examples show that the stress field, considering the interface bending resistance as with the Steigmann-Ogden interface model, differs significantly from that considering only the interface stretching resistance as with the Gurtin-Murdoch…
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