# Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/Si$_x$Ge$_{1-x}$ quantum dot

## TL;DR

This paper demonstrates a large, tunable valley splitting exceeding 200 μeV in a Si/SiGe quantum dot, with long spin relaxation times and insights into relaxation mechanisms, advancing silicon spin qubit technology.

## Contribution

It reports the first demonstration of a large, reproducibly tunable valley splitting in a Si/SiGe quantum dot, with detailed analysis of spin relaxation mechanisms.

## Key findings

- Valley splitting exceeds 200 μeV and is tunable up to 15%.
- Spin relaxation times T1 > 1 s at low magnetic fields.
- Relaxation limited by valley hotspot and phonon noise at higher fields.

## Abstract

Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 $\mu$eV in a gate-defined single quantum dot, hosted in molecular-beam epitaxy-grown $^{28}$Si/SiGe. The valley splitting is monotonically and reproducibly tunable up to 15 % by gate voltages, originating from a 6 nm lateral displacement of the quantum dot. We observe static spin relaxation times $T_1>1$ s at low magnetic fields in our device containing an integrated nanomagnet. At higher magnetic fields, $T_1$ is limited by the valley hotspot and by phonon noise coupling to intrinsic and artificial spin-orbit coupling, including phonon bottlenecking.