# Phase evolution and superconductivity enhancement in Se-substituted MoTe$_2$ thin films

## TL;DR

This study demonstrates that selenium substitution in MoTe$_2$ thin films induces a series of structural phase transitions and significantly enhances superconductivity, opening pathways for exploring topological superconductivity and phase-sensitive devices.

## Contribution

It reveals how Se-substitution drives phase transitions from Td to 1T' to 2H in MoTe$_2$ and enhances superconductivity through two-band mechanisms.

## Key findings

- Sequential phase transitions with increasing Se content.
- Superconductivity is notably enhanced by Se substitution.
- Potential for topological superconductivity and phase-sensitive device development.

## Abstract

The strong spin$-$orbit coupling (SOC) and numerous crystal phases in few$-$layer transition metal dichalcogenides (TMDCs) MX$_2$ (M$=$W, Mo, and X$=$Te, Se, S) has led to a variety of novel physics, such as Ising superconductivity and quantum spin Hall effect realized in monolayer 2H$-$ and Td$-$MX$_2$, respectively. Consecutive tailoring of the MX$_2$ structure from 2H to Td phase may realize the long$-$sought topological superconductivity in one material system by incorporating superconductivity and quantum spin Hall effect together. In this work, by combing Raman spectrum, X-ray photoelectron spectrum (XPS), scanning transmission electron microscopy imaging (STEM) as well as electrical transport measurements, we demonstrate that a consecutively structural phase transitions from Td to 1T$'$ to 2H polytype can be realized as the Se-substitution concentration increases. More importantly, the Se$-$substitution has been found to notably enhance the superconductivity of the MoTe$_2$ thin film, which is interpreted as the introduction of the two$-$band superconductivity. The chemical constituent induced phase transition offers a new strategy to study the s$_{+-}$ superconductivity and the possible topological superconductivity as well as to develop phase$-$sensitive devices based on MX$_2$ materials.

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Source: https://tomesphere.com/paper/1907.03521