Comparative studies of optoelectrical properties of prominent PV materials: Halide Perovskite, CdTe, and GaAs
Fan Zhang, Jose F. Castaneda, Shangshang Chen, Wuqiang Wu, Michael J., DiNezza, Maxwell Lassise, Wanyi Nie, Aditya Mohite, Yucheng Liu, Shengzhong, Liu, Daniel Friedman, Henan Liu, Qiong Chen, Yong-Hang Zhang, Jinsong Huang,, and Yong Zhang

TL;DR
This study compares the optoelectrical properties of halide perovskite, CdTe, and GaAs PV materials, revealing that perovskites have lower recombination rates and higher efficiencies due to structural disorder and surface effects.
Contribution
It provides a comprehensive comparative analysis of PV materials using novel imaging and modeling techniques, highlighting the unique advantages of perovskites.
Findings
Perovskites exhibit higher PL efficiency than CdTe and GaAs.
Structural disorder in perovskites suppresses nonradiative recombination.
Lower surface recombination contributes to perovskite's high PV efficiency.
Abstract
We compare three representative high performance PV materials: halide perovskite MAPbI3, CdTe, and GaAs, in terms of photoluminescence (PL) efficiency, PL lineshape, carrier diffusion, and surface recombination, over multiple orders of photo-excitation density. An analytic model is used to describe the excitation density dependence of PL intensity and extract the internal PL efficiency and multiple pertinent recombination parameters. A PL imaging technique is used to obtain carrier diffusion length without using a PL quencher, thus, free of unintended influence beyond pure diffusion. Our results show that perovskite samples tend to exhibit lower Shockley-Read-Hall (SRH) recombination rate in both bulk and surface, thus higher PL efficiency than the inorganic counterparts, particularly under low excitation density, even with no or preliminary surface passivation. PL lineshape and…
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